Transition levels of defects in ZnO: total energy and Janak's theorem methods.

نویسندگان

  • Aurab Chakrabarty
  • Charles H Patterson
چکیده

Transition levels of defects are commonly calculated using either methods based on total energies of defects in relevant charge states or energy band single particle eigenvalues. The former method requires calculation of total energies of charged, perfect bulk supercells, as well as charged defect supercells, to obtain defect formation energies for various charge states. The latter method depends on Janak's theorem to obtain differences in defect formation energies for various charge states. Transition levels of V(Zn), V(O), and V(ZnO) vacancy defects in ZnO are calculated using both methods. The mean absolute deviation in transition level calculated using either method is 0.3 eV. Relative computational costs and accuracies of the methods are discussed.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Acceptor-like deep level defects in ion-implanted ZnO

Related Articles Donor behavior of Sb in ZnO J. Appl. Phys. 112, 033706 (2012) Transition levels of defects in ZnO: Total energy and Janak's theorem methods J. Chem. Phys. 137, 054709 (2012) Ab-initio studies on Li doping, Li-pairs, and complexes between Li and intrinsic defects in ZnO J. Appl. Phys. 111, 123713 (2012) Intrinsic and extrinsic defect relaxation behavior of ZnO ceramics J. Appl. ...

متن کامل

Study on interactions between Cadmium and defects in Cd-doped ZnO by first-principle calculations

An ab initio calculation based on density functional theory is applied to study the formation energy and transition energy level of defects and complexes in Cd-dopped ZnO. The calculation shows that the incorporation of Cd into ZnO leads to the increase of the O vacancies (VO). VO exists in the form of CdZneVO complex, which can balance the strain caused by CdZn and VO. Due to high formation en...

متن کامل

The Effect of Annealing, Synthesis Temperature and Structure on Photoluminescence Properties of Eu-Doped ZnO Nanorods

In this study un-doped and Eu-doped ZnO nanorods and microrads were fabricated by Chemical Vapor Deposition (CVD) method. The effects of annealing, synthesis temperature and structure on structural and photoluminescence properties of Eu-doped ZnO samples were studied in detail. Prepared samples were characterized using X-Ray diffraction (XRD), scanning electron microscopy (SEM), particle size a...

متن کامل

Structural stability and defect energetics of ZnO from diffusion quantum Monte Carlo.

We have applied the many-body ab initio diffusion quantum Monte Carlo (DMC) method to study Zn and ZnO crystals under pressure and the energetics of the oxygen vacancy, zinc interstitial, and hydrogen impurities in ZnO. We show that DMC is an accurate and practical method that can be used to characterize multiple properties of materials that are challenging for density functional theory (DFT) a...

متن کامل

New perspective on formation energies and energy levels of point defects in nonmetals.

We propose a powerful scheme to accurately determine the formation energy and thermodynamic charge transition levels of point defects in nonmetals. Previously unknown correlations between defect properties and the valence-band width of the defect-free host material are identified allowing for a determination of the former via an accurate knowledge of the latter. These correlations are identifie...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • The Journal of chemical physics

دوره 137 5  شماره 

صفحات  -

تاریخ انتشار 2012